Ultrasmooth Epitaxial Pt Thin Films Grown by Pulsed Laser Deposition.

Platinum (Pt) thin films are useful in applications requiring high-conductivity electrodes with excellent thermal and chemical stability. Ultrasmooth and epitaxial Pt thin films with single-crystalline domains have the added benefit of providing ideal templates for the subsequent growth of heteroepitaxial structures. Here, we grow epitaxial Pt (111) electrodes (ca. 30 nm thick) on sapphire (α-Al2O3 (0001)) substrates with pulsed laser deposition. This versatile technique allows control of the growth process and fabrication of films with carefully tailored parameters. X-ray scattering, atomic-force microscopy, and electron microscopy provide structural characterization of the films. Various gaseous atmospheres and temperatures were explored to achieve epitaxial growth of films with low roughness. A two-step (500 °C/300 °C) growth process was developed, yielding films with improved epitaxy without compromising roughness. The resulting films possess ultrasmooth interfaces (<3 Å) and high electrical conductivity (6.9 × 106 S/m). Finally, Pt films were used as current collectors and templates to grow lithium manganese oxide (LiMn2O4 (111)) epitaxial thin films, a cathode material used in Li-ion batteries. Using a solid-state ionogel electrolyte, the films were highly stable when electrochemically cycled in the 3.5-4.3 V vs Li/Li+ range.

Electrolyte Reactivity on the MgV2O4 Cathode Surface.

Predictive understanding of the molecular interaction of electrolyte ions and solvent molecules and their chemical reactivity on electrodes has been a major challenge but is essential for addressing instabilities and surface passivation that occur at the electrode-electrolyte interface of multivalent magnesium batteries. In this work, the isolated intrinsic reactivities of prominent chemical species present in magnesium bis(trifluoromethanesulfonimide) (Mg(TFSI)2) in diglyme (G2) electrolytes, including ionic (TFSI-, [Mg(TFSI)]+, [Mg(TFSI):G2]+, and [Mg(TFSI):2G2]+) as well as neutral molecules (G2) on a well-defined magnesium vanadate cathode (MgV2O4) surface, have been studied using a combination of first-principles calculations and multimodal spectroscopy analysis. Our calculations show that nonsolvated [Mg(TFSI)]+ is the strongest adsorbing species on the MgV2O4 surface compared with all other ions while partially solvated [Mg(TFSI):G2]+ is the most reactive species. The cleavage of C-S bonds in TFSI- to form CF3- is predicted to be the most desired pathway for all ionic species, which is followed by the cleavage of C-O bonds of G2 to yield CH3+ or OCH3- species. The strong stabilization and electron transfer between ionic electrolyte species and MgV2O4 is found to significantly favor these decomposition reactions on the surface compared with intrinsic gas-phase dissociation. Experimentally, we used state-of-the-art ion soft landing to selectively deposit mass-selected TFSI-, [Mg(TFSI):G2]+, and [Mg(TFSI):2G2]+ on a MgV2O4 thin film to form a well-defined electrolyte-MgV2O4 interface. Analysis of the soft-landed interface using X-ray photoelectron, X-ray absorption near-edge structure, electron energy-loss spectroscopies, as well as transmission electron microscopy confirmed the presence of decomposition species (e.g., MgFx, carbonates) and the higher amount of MgFx with [Mg(TFSI):G2]+ formed in the interfacial region, which corroborates the theoretical observation. Overall, these results indicate that Mg2+ desolvation results in electrolyte decomposition facilitated by surface adsorption, charge transfer, and the formation of passivating fluorides on the MgV2O4 cathode surface. This work provides the first evidence of the primary mechanisms leading to electrolyte decomposition at high-voltage oxide surfaces in multivalent batteries and suggests that the design of new, anodically stable electrolytes must target systems that facilitate cation desolvation.

Understanding the Solid-State Electrode-Electrolyte Interface of a Model System Using First-Principles Statistical Mechanics and Thin-Film X-ray Characterization.

Intermixing of atomic species at the electrode-electrolyte boundaries can impact the properties of the interfaces in solid-state batteries. Herein, this work uses first-principles statistical mechanics along with experimental characterization to understand intermixing at the electrode-electrolyte interface. For the model presented in this work, lithium manganese oxide (LiMn2O4, LMO) and lithium lanthanum titanate (Li3xLa2/3-xTiO3, LLTO) are employed as the cathode and electrolyte, respectively. The results of the computational work show that Ti-Mn intermixing at the interface is significant at synthesis temperatures. The experimental results in this work find that, at some critical temperatures between 600 and 700 °C for material preparation, the interface of LLTO-LMO becomes blurred. Calculations predict that the interface is unstable with regard to Ti-Mn intermixing starting at 0 K, suggesting that the critical temperature found in the experiment is related to kinetics. The work overall suggests that, in designing a solid-state battery, the fundamental reactions such as intermixing need to be considered.

Origin of Enhanced Cyclability in Covalently Modified LiMn1.5Ni0.5O4 Cathodes.

High-voltage lithium-ion cathode materials exhibit exceptional energy densities; however, rapid capacity fade during cell cycling prohibits their widespread utilization. Surface modification of cathode-active materials by organic self-assembled monolayers (SAMs) has emerged as an approach to improve the longevity of high-voltage electrodes; however, the surface chemistry at the electrode/electrolyte interphase and its dependence on monolayer structure remains unclear. Herein, we investigate the interplay between monolayer structure, electrochemical performance, and surface chemistry of high-voltage LiMn1.5Ni0.5O4 (LMNO) electrodes by the application of silane-based SAMs of variable length and chemical composition. We demonstrate that the application of both hydrophobic and hydrophilic monolayers results in improved galvanostatic capacity retention relative to unmodified LMNO. The extent of this improvement is tied to the structure of the monolayer with fluorinated alkyl-silanes exhibiting the greatest overall capacity retention, above 96% after 100 charge/discharge cycles. Postmortem surface analysis reveals that the presence of the monolayer enhances the deposition of LiF at the electrode surface during cell cycling and that the total surface concentration correlates with the overall improvements in capacity retention. We propose that the enhanced deposition of highly insulating LiF increases the anodic stability of the interphase, contributing to the improved galvanostatic performance of modified electrodes. Moreover, this work demonstrates that the modification of the electrode surface by the selection of an appropriate monolayer is an effective approach to tune the properties and behavior of the electrode/electrolyte interphase formed during battery operation.

Understanding the Role of Overpotentials in Lithium Ion Conversion Reactions: Visualizing the Interface.

Oxide conversion reactions are known to have substantially higher specific capacities than intercalation materials used in Li-ion batteries, but universally suffer from large overpotentials associated with the formation of interfaces between the resulting nanoscale metal and Li2O products. Here we use the interfacial sensitivity of operando X-ray reflectivity to visualize the structural evolution of ultrathin NiO electrodes and their interfaces during conversion. We observe two additional reactions prior to the well-known bulk, three-dimensional conversion occurring at 0.6 V: an accumulation of lithium at the buried metal/oxide interface (at 2.2 V) followed by interfacial lithiation of the buried NiO/Ni interface at the theoretical potential for conversion (at 1.9 V). To understand the mechanisms for bulk and interfacial lithiation, we calculate interfacial energies using density functional theory to build a potential-dependent nucleation model for conversion. These calculations show that the additional space charge layer of lithium is a crucial component for reducing energy barriers for conversion in NiO.

Structural analysis of the initial lithiation of NiO thin film electrodes.

Observations of the initial lithiation of NiO electrodes demonstrate how to seed conversion reactions using interfaces in a thin film Ni/NiO bilayer architecture. Operando X-ray reflectivity (XRR) reveals that structural changes in a NiO film begin at potentials near the theoretical reduction potential (1.8-2.0 V) with detectable lithiation of both the buried Ni/NiO interface and the outer NiO surface that occur prior to the reaction of the NiO film. This initial conversion reaction is most pronounced in ultrathin NiO films (∼20 Å) with only small changes to the NiO film surface for thicker films (∼67 Å). The limited reactivity of thicker NiO films probed using operando grazing incidence small-angle X-ray scattering (GISAXS) shows the growth of nanoparticles at the electrode/electrolyte interface during initial lithium ion insertion, with a 16-20 Å average radius. Ex situ X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS) confirm our conclusions about the morphological changes accompanying initial stage of lithiation in these conversion reaction electrodes. The present study reveals the interconnected challenges of solid-solid transitions, overpotentials, interfacial nucleation and kinetics, and transition metal dissolution in conversion-type electrodes that are critical for their use as electrodes in lithium-ion batteries.

Multistates and Polyamorphism in Phase-Change K2Sb8Se13.

The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal → amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous → amorphous transition called polyamorphism are exceptionally rare. K2Sb8Se13 (KSS) reported here is the first example of a material that has both amorphous → amorphous polyamorphic transition and amorphous → crystal transition at easily accessible temperatures (227 and 263 °C, respectively). The transitions are associated with the atomic coordinative preferences of the atoms, and all three states of K2Sb8Se13 are stable in air at 25 °C and 1 atm. All three states of K2Sb8Se13 exhibit distinct optical bandgaps, Eg = 1.25, 1.0, and 0.74 eV, for the amorphous-II, amorphous-I, and crystalline versions, respectively. The room-temperature electrical conductivity increases by more than 2 orders of magnitude from amorphous-I to -II and by another 2 orders of magnitude from amorphous-II to the crystalline state. This extraordinary behavior suggests that a new class of materials exist which could provide multistate level systems to enable higher-order computing logic circuits, reconfigurable logic devices, and optical switches.

Lithiation of multilayer Ni/NiO electrodes: criticality of nickel layer thicknesses on conversion reaction kinetics.

X-ray reflectivity and transmission electron microscopy (TEM) were used to characterize the morphological changes in thin film electrodes with alternating Ni and NiO layers during lithiation as a function of the Ni buffer layer thickness. Complete lithiation of the active NiO layers occurs only when the thickness of the Ni/NiO bilayers are less than 75 Å - a threshold value that is determined by the sum of the Ni quantity in the Ni/NiO bilayer of the multilayer stack. Thicker Ni/NiO bilayers present a kinetic barrier for lithium ion diffusion inside the stack resulting in partial lithiation of the multilayer electrodes in which only the top NiO layer lithiates. Lithiation of NiO layers in a multilayer stack also leads to an interface-specific reaction that is observed to increase the thicknesses of adjacent Ni layers by 3-4 Å and is associated with the formation of a low-density Li2O layer, corresponding to an interfacially-driven phase separation of the NiO. Rate dependent cyclic voltammetry studies reveal a linear relation between the peak current and scan rate suggesting that the lithiation kinetics are controlled by charge transfer resistance at the liquid-solid interface.

Liquid Water- and Heat-Resistant Hybrid Perovskite Photovoltaics via an Inverted ALD Oxide Electron Extraction Layer Design.

Despite rapid advances in conversion efficiency (>22%), the environmental stability of perovskite solar cells remains a substantial barrier to commercialization. Here, we show a significant improvement in the stability of inverted perovskite solar cells against liquid water and high operating temperature (100 °C) by integrating an ultrathin amorphous oxide electron extraction layer via atomic layer deposition (ALD). These unencapsulated inverted devices exhibit a stable operation over at least 10 h when subjected to high thermal stress (100 °C) in ambient environments, as well as upon direct contact with a droplet of water without further encapsulation.

Modular time division multiplexer: Efficient simultaneous characterization of fast and slow transients in multiple samples.

A modular time division multiplexer (MTDM) device is introduced to enable parallel measurement of multiple samples with both fast and slow decay transients spanning from millisecond to month-long time scales. This is achieved by dedicating a single high-speed measurement instrument for rapid data collection at the start of a transient, and by multiplexing a second low-speed measurement instrument for slow data collection of several samples in parallel for the later transients. The MTDM is a high-level design concept that can in principle measure an arbitrary number of samples, and the low cost implementation here allows up to 16 samples to be measured in parallel over several months, reducing the total ensemble measurement duration and equipment usage by as much as an order of magnitude without sacrificing fidelity. The MTDM was successfully demonstrated by simultaneously measuring the photoconductivity of three amorphous indium-gallium-zinc-oxide thin films with 20 ms data resolution for fast transients and an uninterrupted parallel run time of over 20 days. The MTDM has potential applications in many areas of research that manifest response times spanning many orders of magnitude, such as photovoltaics, rechargeable batteries, amorphous semiconductors such as silicon and amorphous indium-gallium-zinc-oxide.

Morphological Evolution of Multilayer Ni/NiO Thin Film Electrodes during Lithiation.

Oxide conversion reactions in lithium ion batteries are challenged by substantial irreversibility associated with significant volume change during the phase separation of an oxide into lithia and metal species (e.g., NiO + 2Li(+) + 2e(-) → Ni + Li2O). We demonstrate that the confinement of nanometer-scale NiO layers within a Ni/NiO multilayer electrode can direct lithium transport and reactivity, leading to coherent expansion of the multilayer. The morphological changes accompanying lithiation were tracked in real-time by in-operando X-ray reflectivity (XRR) and ex-situ cross-sectional transmission electron microscopy on well-defined periodic Ni/NiO multilayers grown by pulsed-laser deposition. Comparison of pristine and lithiated structures reveals that the nm-thick nickel layers help initiate the conversion process at the interface and then provide an architecture that confines the lithiation to the individual oxide layers. XRR data reveal that the lithiation process starts at the top and progressed through the electrode stack, layer by layer resulting in a purely vertical expansion. Longer term cycling showed significant reversible capacity (∼800 mA h g(-1) after ∼100 cycles), which we attribute to a combination of the intrinsic bulk lithiation capacity of the NiO and additional interfacial lithiation capacity. These observations provide new insight into the role of metal/metal oxide interfaces in controlling lithium ion conversion reactions by defining the relationships between morphological changes and film architecture during reaction.

Three dimensional indium-tin-oxide nanorod array for charge collection in dye-sensitized solar cells.

In this article, we report the design, fabrication, characterization, and simulation of three-dimensional (3D) dye-sensitized solar cells (DSSCs), using ordered indium-tin-oxide (ITO) nanorod (NR) arrays as the photoanode, and compare them with conventional planar (2D) DSSCs. The ITO NR array used in the 3D cell greatly improves its performance by providing shorter electron pathways and reducing the recombination rate of the photogenerated electrons. We observed a 10-20% enhancement of the energy conversion efficiency, primarily due to an increased short circuit current. This finding supports the concept of using 3D photoanodes with optically transparent and conducting nanorods for the enhancement of the energy-harvesting devices that require short charge collection distance without sacrificing the optical thickness. Thus, unlike the conventional solar cell structure, the functions for photon collection and charge transport are decoupled to allow for improved cell designs.

Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods.

Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

The Structure and Properties of Amorphous Indium Oxide.

A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InO x polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.

Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide.

Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ± 2.8) × 10(-6) Ω cm(2) are obtained.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 microm, respectively, perform far better than a-Ta(2)O(5)-only devices and exhibit saturation-regime field-effect mobilities of approximately 20 cm(2)/V x s, on-currents >10(-4) A, and current on-off ratios >10(5). These TFTs operate at low voltages (approximately 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

Simultaneous growth of pure hyperbranched Zn3As2 structures and long Ga2O3 nanowires.

Through a facile and highly repeatable chemical vapor method, pure three-dimensional hyperbranched Zn(3)As(2) structures and ultralong Ga(2)O(3) nanowires were simultaneously grown with controllable locations in the same experiment. The hyperbranched Zn(3)As(2) consists of cone-shaped submicro-/nanowires and has a single-crystalline tetragonal structure. This is the first report of nano Zn(3)As(2) and hyperbranched Zn(3)As(2) structures. The as-grown Ga(2)O(3) nanowires are monoclinic single crystals. A vapor-solid-solid mechanism is suggested for the growth of the Ga(2)O(3) nanowires, and a vapor-solid mechanism, for the Zn(3)As(2) structures.

Control and characterization of the structural, electrical, and optical properties of amorphous zinc-indium-tin oxide thin films.

Zinc-indium-tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of the indium in the In(2)O(3) structure is replaced by substitution with zinc and tin in equal molar proportions: In(2-2x)Zn(x)Sn(x)O(3), where x = 0.3. Films grown at 25 and 100 degrees C exhibit electron diffraction patterns (EDPs) typical of amorphous materials. At a deposition temperature of 200 degrees C, evidence of crystallinity begins to appear in the EDP data and becomes more evident in films deposited at 400 degrees C. The advent of crystallinity affects the electrical properties of the ZITO film, and the effect is ascribed to the boundaries between phases in the films. The electrical and optical properties of the amorphous ZITO films grown at 25 degrees C are dependent on the oxygen partial pressure (P(O(2))) during film growth, transitioning from a high-mobility (36 cm(2)/V x s) conductor (sigma approximately 1700 S/cm) at P(O(2)) = 5 mTorr to a high-mobility semiconductor at P(O(2)) approximately 20 mTorr. Field-effect transistors (FETs) prepared with as-deposited amorphous ZITO channel layers on p(+)-Si/300 nm SiO(2) substrates yield FETs with on/off ratios of 10(6), off currents of 10(-8) A, and field-effect saturation mobilities of 10 cm(2)/V x s.